2004. 2. 28 1/4 semiconductor technical data KTX216U revision no : 0 switching application. interface circuit and driver circuit application. features h including two devices in us6. (ultra super mini type with 6 leads.) h with built-in bias resistors. h simplify circuit design. h reduce a quantity of parts and manufacturing process. dim millimeters a b d g us6 2.00 0.20 1.25 0.1 2.1 0.1 0.2+0.10/-0.05 0-0.1 0.9 0.1 0.65 0.15+0.1/-0.05 b1 h c t g 1 3 2 b b1 d a h t 6 4 c c a1 1.3 0.1 a1 5 + _ + _ + _ + _ + _ 1. q (emitter) 4. q common (emitter) 3. q out (collector) 5. q in (base) 6. q (collector) 1 2 2. q (base) 1 1 2 2 equivalent circuit q1 maximum rating (ta=25 ? ) e c q 1 b r1 r2 common out q 2 2 in q r1=10k ? r2=10k ? 1 q1 23 65 4 q2 equivalent circuit (top view) * total raing. characteristic symbol rating unit collector-base voltage v cbo 15 v collector-emitter voltage v ceo 12 v emitter-base voltage v ebo 6 v collector current i c 500 v i cp * 1 " characteristic symbol rating unit output voltage v o 50 v input voltage v i 30, -10 v output current i o 100 v characteristic symbol rating unit power dissipation p d * 200 { junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? bl type name 123 4 6 5 q2 maximum rating (ta=25 ? ) q1, q2 maximum rating (ta=25 ? ) marking epitaxial planar npn transistor * single pulse pw=1ms.
2004. 2. 28 2/4 KTX216U revision no : 0 q1 electrical characteristics (ta=25 ? ) characteristic symbol test condition min. typ. max. unit. output cut-off current i o(off) v o =50v, v i =0 - - 500 t dc current gain g i v o =5v, i o =10 v 50 80 - output voltage v o(on) i o =10 v , i i =0.5 v - 0.1 0.3 v input voltage (on) v i(on) v o =0.2v, i o =5 v - 1.8 2.4 v input voltage (off) v i(off) v o =5v, i o =0.1 v 1.0 1.2 - v transition frequency f t * v o =10v, i o =5 v - 200 - ? input current i i v i =5v - - 0.88 v note : * characteristic of transistor only. q2 electrical characteristics (ta=25 ? ) characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =15v, i e =0 - - 100 na collector-base breakdown voltage v (br)cbo i e =10 a 15 - - v collector-emitter breakdown voltage v (br)ceo i c =1ma 12 - - v emitter-base breakdown voltage v (br)ebo i e =10 a 6 - - v dc current gain h fe v ce =2v, i c =10ma 270 - 680 - collector-emitter saturation voltage v ce(sat) i c =200ma, i b =10ma - 90 250 mv transition frequency f t v ce =2v, i c =10ma, f t =100mhz - 320 - mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz - 7.5 - pf
2004. 2. 28 3/4 KTX216U revision no : 0 collector current i c (ma) base-emitter voltage v be (v) i c - v be ta=125 c v =2v i /i =20 ce v =2v ce v =2v ce cb i /i =20 cb i /i =50 cb i /i =20 c b i /i =10 c b ta=25 c ta= -40 c ta=125 c ta=25 c ta=-40 c ta=25 c ta=125 c ta=25 c ta=-40 c ta=25 c ta=125 c t a=25 c ta=-40 c 10 1k 30 50 100 300 500 v ce(sat) - i c collector current i c (ma) collector-emitter saturation voltage v ce(sat) (mv) 13 1 10 30 100 300 1 k 3 5 10 30 50 100 300 500 1k v ce(sat) - i c collector current i c (ma) collector-emitter saturation voltage v ce(sat) (mv) 13 1 10 30 100 300 1k 3 5 10 30 50 100 300 500 1k 0 1 0.5 1.0 1.5 3 5 10 30 50 100 300 500 1k f t - i c collector current i c (ma) t transition frequency f (mhz) 13 10 30 100 300 1 k 100 10k 300 500 1k 3k 5k v be(sat) - i c collector current i c (ma) base-emitter saturation voltage v be(sat) (mv) 13 10 30 100 300 1 k 10 1k 30 50 100 300 500 13 10 30 100 300 1k dc current gain h fe collector current i c (ma) q 1 (npn transistor) h fe - i c
2004. 2. 28 4/4 KTX216U revision no : 0 c ob - v cb , c ib - v eb collector-base voltage v cb (v) emitter-base voltage v eb (v) q 1 (npn transistor) c ob collector input capacitance c ib (pf) collector output capacitance c ob (pf) 0.1 0.3 1 1 3 10 30 100 3 5 10 30 50 100 300 500 1k c ib i =0a f=1mhz ta=25 c e collector lpower dissipation p (mw) 0 c 0 ambient temperature ta ( c) pc - ta 25 50 75 100 125 50 100 150 200 250 150 0.5 100 50 30 10 5 3 1 30 10 3 1 0.3 output current i o (ma) 0.3 100 0.1 i o - v i(on) q2 v =0.2v o ta=100 c ta=25 c ta=-25 c input on voltage v i(on) (v) input off voltage v i(off) (v) output current i o ( a) i o - v i(off) o v =5v q2 10k 5k 3k 1k 500 300 100 50 2.0 1.8 1.6 1.4 1.2 1.0 0.8 30 0.6 ta=100 c ta=25 c ta=-25 c output current i o (ma) dc current gain g i g i - i o o v =5v 300 100 50 30 10 100 30 5 10 3 1 0.5 ta=100 c ta=25 c ta=-25 c q2
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